Growth of highly textured SnS on mica using an SnSe buffer layer

Document Type

Journal Article

Publication Date

2014

Keywords

Tin sulfide, van der Waals epitaxy, Nucleation, Mica, Tin selenide, Buffer layer, Low-frequency noise

DOI

10.1016/j.tsf.2014.06.010

Abstract

We report the growth of SnS thin films on mica substrates by molecular beam epitaxy. Excellent 2D layered structure and strong (001) texture were observed with a record low rocking curve full width at half maximum of ~ 0.101° for the SnS(004) diffraction. An interface model is used to investigate the nucleation of SnS on mica which indicates the co-existence of six pairs of lateral growth orientations and is in excellent agreement with the experimental Φ-scan measurements indicating 12 peaks separated by 30° from each other. To control the lateral growth of the SnS epilayers we investigate the utilization of a thin SnSe buffer layer deposited on the mica substrate prior to the growth of the SnS thin film. The excellent lattice match between SnSe and mica enhances the alignment of the nucleation of SnS and suppresses the minor lateral orientations along the mica[110] direction and its orthogonal axis. Detailed low-frequency noise measurement was performed to characterize the trap density in the films and our results clearly demonstrate substantial reduction in the density of the localized states in the SnS epilayer with the use of an SnSe buffer layer.

Source Publication

Thin Solid Film

Volume Number

564

ISSN

00406090

First Page

206

Last Page

212

This document is currently not available here.

Link to Publisher’s Version

Share

COinS